Renesas Electronics Corporation, a leading provider of advanced semiconductor solutions, has introduced the industry’s first sixth-generation Registered Clock Driver (RCD) designed for DDR5 Registered Dual In-line Memory Modules (RDIMMs). This next-generation RCD is the first to reach a data rate of 9600 Mega Transfers Per Second (MT/s), exceeding current industry benchmarks. Building on the success of its Gen5 RCD, which achieved 8800 MT/s, the Gen6 RCD sets a new milestone in memory interface speed and efficiency for modern data center servers.
Highlights of Renesas Gen6 DDR5 RCD
- 10% Higher Bandwidth: Achieves 9600 MT/s, a boost from the previous 8800 MT/s Gen5 model.
- Backward-Compatible Design: Ensures a smooth upgrade path from Gen5 platforms.
- Superior Signal Integrity & Power Efficiency: Optimized for demanding AI, HPC, and LLM applications.
- Advanced DFE Architecture: Features eight taps with 1.5mV precision for enhanced signal margin tuning.
- Integrated DESTM Technology: Provides real-time signal quality insights, margin monitoring, and diagnostic feedback to support ultra-high-speed performance.
The latest DDR5 RDIMMs are designed to meet the rapidly growing memory bandwidth requirements of Artificial Intelligence (AI), High-Performance Computing (HPC), and other data center workloads. Renesas has played a pivotal role in advancing RDIMM technology, working closely with leading CPU and memory manufacturers as well as key data center customers. With its proven expertise in signal integrity and power optimization, Renesas continues to lead the DDR5 RCD market, driving innovation for next-generation server performance.
The rapid expansion of generative AI is accelerating the need for higher SoC core counts, which in turn is driving record demand for greater memory bandwidth and capacity key factors in boosting data center performance,” said Sameer Kuppahalli, Vice President of the Memory Interface Division at Renesas. “With our sixth-generation DDR5 Registered Clock Driver, Renesas reaffirms its commitment to advancing memory interface innovation and delivering cutting-edge solutions that keep pace with evolving market needs.
Samsung has worked closely with Renesas over multiple generations of memory interface technologies, including the successful qualification of the Gen5 DDR5 RCD and PMIC5030,” said Indong Kim, Vice President of DRAM Product Planning at Samsung Electronics. “We are now pleased to adopt the Gen6 RCD in our DDR5 DIMMs across a range of SoC platforms, enabling enhanced performance to meet the increasing demands of AI, HPC, and other data-intensive applications.
